5 EASY FACTS ABOUT N TYPE GE DESCRIBED

≤ 0.15) is epitaxially grown on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the framework is cycled through oxidizing and annealing levels. Mainly because of the preferential oxidation of Si above Ge [sixty eight], the initial Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử